features high hfe low noise complementary to kta1504 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 60v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe v ce = 6v, i c = 2ma 70 700 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.1 0.25 v base-emitter saturation voltage v be (sat) i c =100ma, i b = 10ma 1 v transition frequency f t v ce =10v, i c = 1ma 80 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mh z 2.0 3.5 pf noise figure nf v ce =6v,i c =0.1ma,rg=10k ? ,f=1kh z 1.0 10 db classification of h fe rank o y gr bl range 70-140 120-240 200-400 350-700 marking alo aly alg all so t -23 1. base 2. emitter 3. collector KTC3875 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTC3875 2 date:2011/05 www.htsemi.com semiconductor jinyu
KTC3875 3 date:2011/05 www.htsemi.com semiconductor jinyu
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